The electrocatalytic activity and electronic conductivity of 2D transition metal chalcogenides are usually enhanced by a doping or substitution of heterogeneous atoms. Herein, a rare earth metal of gadolinium (Gd3+) was doped with MoSe2 and synthesized through the hydrothermal method. The morphology and nanostructure of Gd3+ with MoSe2 nanospheres were analyzed under field emission scanning electron microscopy and high-resolution transmission electron microscopy. The chemical structural properties of GdMoSe2 spheres were analyzed by X-ray diffraction, Fourier-transform infrared spectroscopy, and X-ray photoelectron spectroscopy. Moreover, a screen-printed carbon electrode modified GdMoSe2 nanospheres (Gd-MoSe2/SPCE) was fabricated and used for tryptophan sensor applications. The Gd@MoSe2 SPCE shows a remarkable sensing performance towards tryptophan and resulting in a wide linear range (20 nM - 220 µM) with a low detection limit (6.7 nM). Under the optimal condition, the developed electrochemical sensor was successfully used to determine tryptophan in blood serum and milk samples. The electrochemical non-enymatic biosensing results suggest that the doping of the Gd3+doped MoSe2 material is a promising electrocatalyst in biological and food samples.
The advancement of epitaxial technology has enabled the simulation of oxide heterostructures (HS) with unique interfacial material characteristics not found in bulk materials. Recent discoveries of emergent phenomena of definite oxide interfaces have attracted much attention on oxide HS. This work explored the possibility of tuning the electron mobility of SrTiO3 (STO) through CaSnO3/SrTiO3 and ZnSnO3/SrTiO3 HSs, based on density functional theory (DFT). Based on the Sn–5s states of CSO and ZSO with more substantial band dispersion than Ti–3d states of STO, near conduction band minimum (CBM), our simulated results suggest that the bandgaps of CSO/STO (0.502 eV) and ZSO/STO (0.349 eV) HS systems are much smaller than bulk STO (1.802 eV). The effective electron masses also show much smaller values (0.31 and 0.40 m0) and (0.38 and 0.52 m0) for (CSO)7/(STO)4 and (ZSO)1/(STO)4 for HS systems compared to bulk STO (7.03 and 0.94 m0) along Γ–X and Γ–M direction. The bandgap and effective electron masses results suggest that the bandgap of STO can be well controlled and tuned by the thin film layer numbers of CSO and ZSO with better electron transportability.
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