Perovskite photovoltaics (PVs) is an emerging PV technology that attracts interest thanks to an unprecedented combination of properties, including the ease of the bandgap tunability. The feasibility to deploy wide bandgap absorbers (>2.2 eV) leading to high average visible transmittance (AVT) is particularly intriguing for building‐integrated PVs, in particular for smart windows, façades, and agrivoltaics. However, research on this topic is still at the initial stage, especially concerning the development of scalable deposition techniques. Uniform coverage and morphology control of bromide perovskite film are the main issues to tackle. Herein, a systematic study on the development of FAPbBr3‐based semi‐transparent perovskite solar cell (ST‐PSC) is presented by replacing spin‐coating as the main deposition technique used for the device fabrication. To tackle this topic, the blade coating technique is employed to obtain a manufacturing flow performed at low temperature in the air environment. The results for the blade‐coated device show a power conversion efficiency of 5.8%, AVT of 52.3%, and bifacial factor of 86.5%. Moreover, scalable and uniform FAPbBr3 deposition on 300 cm2 substrates is presented for the first time. The combination of low temperature, scale‐up capability, and air processing along with promising PV performances represent a feasible platform for the future exploitation of PSC in building integrated photovoltaic.
Low-temperature plasma enhanced atomic layer deposition (PE-ALD) was successfully used to grow silicon (Si) doped amorphous and microcrystalline gallium phosphide (GaP) layers onto p-type Si wafers for the fabrication of n-GaP/p-Si heterojunction solar cells. PE-ALD was realized at 380 C with continuous H 2 plasma discharge and the alternate use of phosphine and trimethylgallium as sources of P and Ga atoms, respectively. The layers were doped with silicon thanks to silane (SiH 4) diluted in H 2 that was introduced as a separated step. High SiH 4 dilution in H 2 (0.1%) allows us to deposit stoichiometric GaP layers. Hall measurements performed on the GaP:Si/p-Si structures reveal the presence of an n-type layer with a sheet electron density of 6-10 Â 10 13 cm À2 and an electron mobility of 13-25 cm 2 V À1 s À1 at 300 K. This is associated with the formation of a strong inversion layer in the p-Si substrate due to strong band bending at the GaP/Si interface. GaP:Si/p-Si heterostructures exhibit a clear photovoltaic effect, with the performance being currently limited by the poor quality of the p-Si wafers and reflection losses at the GaP surface. This opens interesting perspectives for Si doped GaP deposited by PE-ALD for the fabrication of p-Si based heterojunction solar cells.
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