The synthesis and performance of a cost-effective mixed fullerene at the 100+ g scale with a reaction yield of 85% is demonstrated.
We report the demonstration of sputter‐coated aluminum contacts directly onto P3HT:PCBM organic photovoltaic devices using a R2R process without detrimentally influencing the performance of the devices. The final sputtered devices do not require any protective buffer layers to produce efficient performance. Depth profiling analysis of sputtered films using X‐ray photoelectron spectroscopy (XPS) indicated the presence of a 5–6 nm insulating oxide layer generated at the cathode interface for all sputtering target power densities greater than 1.4 W cm−2. The aluminum penetration into the P3HT:PCBM film was found to be consistent with the depth of this oxide layer, suggesting that aluminum penetration into the organic film is not the primary reason for performance limitations in sputtered devices. Introduction of thermally evaporated aluminum buffer layers prior to deposition of sputtered aluminum cathodes demonstrated that the performance of devices after annealing matched those of reference devices prepared with no sputtering for a buffer layer thickness of only 20 nm. Further analysis of the device J‐‐V curves revealed an S‐shaped kink prior to annealing, indicating that the major reason for the poor performance in sputtered devices was the introduction of a charge extraction barrier at the cathode, which was subsequently removed upon annealing. Rigorous removal of oxygen from the sputtering chamber prior to aluminum deposition onto the P3HT:PCBM active layer was subsequently observed to produce a device with an efficiency close to that of the thermally evaporated reference device without the requirement for evaporated buffer layers. The results presented here highlight a pathway towards an alternative R2R cathode fabrication technique that allows the highly efficient aluminum cathodes employed in small‐scale devices to be transferred onto large‐scale, flexible, and low‐cost R2R printed organic electronic devices.
Deposition of functionalized nanoparticles onto solid surfaces has created a new revolution in electronic devices. Surface adsorbates such as ionic surfactants or additives are often used to stabilize such nanoparticle suspensions; however, little is presently known about the influence of such surfactants and additives on specific electronic and chemical functionality of nanoparticulate electronic devices. This work combines experimental measurements and theoretical models to probe the role of an ionic surfactant in the fundamental physical chemistry and electronic charge carrier behavior of photodiode devices prepared using multicomponent organic electronic nanoparticles. A large capacitance was detected, which could be subsequently manipulated using the external stimuli of light, temperature, and electric fields. It was demonstrated that analyzing this capacitance through the framework of classical semiconductor analysis produced substantially misleading information on the electronic trap density of the nanoparticles. Electrochemical impedance measurements demonstrated that it is actually the stabilizing surfactant that creates capacitance through two distinct mechanisms, each of which influenced charge carrier behavior differently. The first mechanism involved a dipole layer created at the contact interfaces by mobile ions, a mechanism that could be replicated by addition of ions to solution-cast devices and was shown to be the major origin of restricted electronic performance. The second mechanism consisted of immobile ionic shells around individual nanoparticles and was shown to have a minor impact on device performance as it could be removed upon addition of electronic charge in the photodiodes through either illumination or external bias. The results confirmed that the surfactant ions do not create a significantly increased level of charge carrier traps as has been previously suspected, but rather, preventing the diffusion of mobile ions through the nanoparticulate film and their accumulation at contacts is critical to optimize the performance.
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