Interlayer friction between the atomic planes of 2D materials and heterostructures is a promising probe of the physics in their interlayer couplings and superlubricity. However, it is still challenging to measure the interlayer friction between well-defined 2D layers. We propose an approach of thermally assisted mechanical exfoliation and transfer to fabricate various 2D flake-wrapped atomic force microscopy (AFM) tips and to directly measure the interlayer friction between 2D flakes in single-crystalline contact. First, superlubricity between different 2D flakes and layered bulk materials is achieved with a friction coefficient as low as 10. The rotation angle dependence of superlubricity is observed for friction between graphite layers, whereas it is not observed between graphite and h-BN because of the incommensurate contact of the mismatched lattices. Second, the interlayer lateral force map between ReS layers is measured with atomic resolution, showing hexagonal patterns, as further verified by theoretical simulations. The tribological system constructed here offers an experimental platform to study interlayer couplings and friction between 2D flakes and layered bulk materials.
Controlling the interlayer twist angle offers a powerful means for tuning the electronic properties of two-dimensional (2D) van der Waals materials. Typically, the electrical conductivity would increase monotonically with decreasing twist angle owing to the enhanced coupling between adjacent layers. Here, we report a nonmonotonic angle-dependent vertical conductivity across the interface of bilayer graphene with low twist angles. More specifically, the vertical conductivity enhances gradually with decreasing twist angle up to a crossover angle at θc ≈ 5°, and then it drops notably upon further decrease in the twist angle. Revealed by density functional theory calculations and scanning tunneling microscopy, the abnormal behavior is attributed to the unusual reduction in average carrier density originating from local atomic reconstruction. The impact of atomic reconstruction on vertical conductivity is unique for low-angle twisted 2D van der Waals materials and provides a strategy for designing and optimizing their electronic performance.
Bilayer or few‐layer 2D materials showing novel electrical properties in electronic device applications have aroused increasing interest in recent years. Obtaining a comprehensive understanding of interlayer contact conductance still remains a challenge, but is significant for improving the performance of bilayer or few‐layer 2D electronic devices. Here, conductive atomic force microscope (C‐AFM) experiments are reported to explore the interlayer contact conductance between bilayer graphene (BLG) with various twisted stacking structures fabricated by the chemical vapor deposition (CVD) method. The current maps show that the interlayer contact conductance between BLG strongly depends on the twist angle. The interlayer contact conductance of 0° AB‐stacking bilayer graphene (AB‐BLG) is ≈4 times as large as that of 30° twisted bilayer graphene (t‐BLG), which indicates that the twist angle–dependent interlayer contact conductance originates from the coupling–decoupling transitions. Moreover, the moiré superlattice‐level current images of t‐BLG show modulations of local interlayer contact conductance. Density functional theory calculations together with a theoretical model reproduce the C‐AFM current map and show that the modulation is mainly attributed to the overall contribution of local interfacial carrier density and tunneling barrier.
Defect control is crucial for tuning properties of MoS2, which can adjust its performance in applications such as electronics, optics, catalysis, and molecular sensing.
Contacting interfaces with physical isolation and weak interactions usually act as barriers for electrical conduction. The electrical contact conductance across interfaces has long been correlated with the true contact area or the "contact quantity". Much of the physical understanding of the interfacial electrical contact quality was primarily based on Landauer's theory or Richardson formulation. However, a quantitative model directly connecting contact conductance to interfacial atomistic structures still remains absent. Here, we measure the atomic-scale local electrical contact conductance instead of local electronic surface states in graphene/Ru(0001) superstructure, via atomically resolved conductive atomic force microscopy. By defining the "quality" of individual atom−atom contact as the carrier tunneling probability along the interatomic electron transport pathways, we establish a relationship between the atomic-scale contact quality and local interfacial atomistic structure. This real-space model unravels the atomic-level spatial modulation of contact conductance, and the twist angle-dependent interlayer conductance between misoriented graphene layers.
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