Se-doped ZnO lms have been deposited on the sapphire substrates by the radio-frequency magnetron sputtering technique. An inuence of the isoelectronic impurity Se on the room-temperature luminescence of the ZnO lms is studied. It is revealed that the Se doping leads to an appearance of the intense near-band edge emission spectrum, which consists of three emission bands. The dominant emission band is related to the recombination of the bound excitons. The radiation caused by the band-to-band transitions of free carriers is observed in the high-energy side of the spectrum ( ω > Eg).
ZnO(1-x)Se(x) (0≤x≤0.11) thin films have been grown on sapphire (c-Al₂O₃) substrates at the temperature of 350°C by means of the radio-frequency magnetron sputtering technique. The optical transmission, reflectance, and luminescence spectra at room temperature were analyzed. Using the λ-modulation method gives the possibility to reveal the main features of the energy band structure and the nature of the radiative transitions that cause ultraviolet luminescence.
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