Articles you may be interested inFocused ion beam optical column design and consideration on minimum attainable beam size A focused ion beam system with a retarding mode objective lensThe beam characteristics of a focused Ga' -ion beam (FIB) at ion energies between 10 and 150 keY have been investigated by using a 100 keY focused ion beam system with an additional post-objective lens retarding and acceleration electrode. Line structures with minimum feature sizes down to 20 nm almost independent of the landing energy of the ions could be realized by sputtering line patterns in a gold-coated GaAs substrate. The current density profile was determined over six orders of magnitude by measuring the radii of FIB-exposed dot structures as a function of the ion dose. The beam diameters have been found to be in the range between 30 and 45 nm, nearly independent of the available ion energies. The photoluminescence signal of locally intermixed AIGaAs/GaAs quantum well structures was used to study the spatial resolution of FIB-implanted line patterns. The results were compared with the lateral resolution. which can be calculated from the current density distribution of the beam profile.
We have investigated the depth range of ion implantation damage in GaAs/GaAlAs quantum wells. The photoluminescence emission intensity of single quantum wells was used as a local probe for the study of the damage created by an Ar+ ion beam at energies up to 170 keV. The range of the damage was examined for implantations under different angle of incidence. Even for random orientation we observe a wide extension of the defect profiles, which can be described by a characteristic decay length of 90 nm at an ion energy of 70 keV. Ion implantation along the major crystallographic axes leads to effective extensions of the damage, which are larger by more than a factor of 2 due to ion channeling.
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