Articles you may be interested inAll-optical multiwavelength technique for the simultaneous measurement of bulk recombination lifetimes and front/rear surface recombination velocity in single crystal silicon samples
Articles you may be interested inAll-optical multiwavelength technique for the simultaneous measurement of bulk recombination lifetimes and front/rear surface recombination velocity in single crystal silicon samples Bulk and surface components of recombination lifetime based on a twolaser microwave reflection technique An algorithm for separating the bulk and surface components of recombination lifetime obtained via a contactless single laser excitation/microwave reflection decay measurement is presented. The surface recombination component of lifetime is determined by extrapolating the tail portion of the carrier decay curve to the carrier axis. Although the slope of this curve depends on both surface and bulk properties, it is shown that they intercept depends only on the surface component of lifetime. A wide range of surface lifetimes, corresponding to surface recombination velocities from lo2 to 10' cm/s, and bulk lifetimes from a few microseconds to several hundred microseconds can be measured. An experimental verification of the analysis is presented using microwave_a_bsorption/reflection measurements on silicon wafers representing a wide variety of bulk and surface lifetime components.
The electrical activity of interfacial misfit dislocations in silicon has been examined using the electron beam induced current technique in a scanning electron microscope. Clean dislocations formed during high-temperature Si(Ge) chemical vapor epitaxy were studied. These defects were subsequently decorated with known metallic impurities (Au and Ni) by diffusion at different temperatures from a backside evaporated layer. Differences in electrical activity are discussed in relation to the detection limits of electron beam induced current technique and energy levels anticipated for the clean or decorated dislocations.
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