This article demonstrates the possibility of creating memory devices based on polycrystalline mayenite. In the course of the study, structural characterization (XRD, TEM) of ceramic samples of mayenite was carried out, as well as a study of the spectral (THz range) and electrophysical characteristics. Materials obtained by calcination at high (1360–1450 °C) temperatures in an inert argon atmosphere differ in the degree of substitution of oxygen anions О2− for electrons, as indicated by the data on the unit cell parameters and dielectric constant coefficients in the range of 0.2–1.3 THz, as well as differences in the conducting properties of the samples under study by more than five orders of magnitude, from the state of the dielectric for C12A7:O2− to the conducting (metal-like) material in the state of the C12A7:e− electride. Measurements of the current–voltage characteristics of ceramic C12A7:e− showed the presence of memristive states previously detected by other authors only in the case of single crystals. The study of the stability of switching between states in terms of resistance showed that the values of currents for states with high and low resistance remain constant up to 180 switching cycles, which is two times higher than the known literature data on the stability of similar prototypes of devices. It is shown that such samples can operate in a switch mode with nonlinear resistance in the range of applied voltages from –1.3 to +1.3 V.
This paper presents the results of an experimental study of the optical properties of highly resistive monocrystals of potassium titanyl phosphate (KTiOPO4, KTP) in the frequency range of 0.2–1 THz and the temperature range of (−192)–150 °C. The dispersion of the refractive indices is approximated in the form of Sellmeier equations. The results show that the temperature dependence of the Sellmeier coefficients for all three principal optical axes is close to linear and, most likely, does not experience an extremum in the vicinity of the activation temperatures of the cationic conductivity of the KTP crystal at (−73)–(−23) °C. Weak frequency dependence of an optical axis direction angle VZ in the range of 0.2–1 THz is confirmed. However, the change in VZ with temperature is three times higher than reported before.
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